People

Ted Kamins
Principal Scientist

Location:
Quantum Structures Research Initiative Department
Hewlett-Packard Laboratories
Palo Alto, California

Biography:
Ted Kamins is a Principal Scientist in the Quantum Science Research group at Hewlett-Packard Laboratories in Palo Alto, California, where he is focusing on advanced nanostructured electronic materials and devices.

Recent areas of research include self-assembled nanostructures formed by lattice-mismatched epitaxial deposition and self-assembled nanowires grown by catalytically enhanced chemical vapor deposition. He is also a Consulting Professor in the Electrical Engineering Department at Stanford University.

Kamins received his BS, MS and PhD degrees from the University of California, Berkeley. He then joined the Research and Development Laboratory of Fairchild Semiconductor, where he performed early work contributing to the understanding of the then-emerging field of polycrystalline silicon and also contributed to device applications of epitaxial silicon.

He moved to Hewlett-Packard in 1974. At HP Kamins has worked in a number of materials and device-related areas, beginning with the development of UV-sensitive photodiodes, which are enabling devices for spectrophotometers -- instruments in production for more than 20 years, first by HP and now by Agilent Technologies (spun off from HP in 1999).

He then contributed to the emerging areas of silicon-on-insulator and rapid thermal processing. Subsequent work dealt with advanced epitaxy and device technology for the silicon-germanium, heterojunction bipolar transistor, which is currently becoming widely used for wireless communications.

Kamins is co-author with R. S. Muller of the textbook "Device Electronics for Integrated Circuits" and is author of the book "Polycrystalline Silicon for Integrated Circuits and Displays."

He is a Fellow of the IEEE and a Fellow of the Electrochemical Society. He received the 1989 Electronics Division Award of the Electrochemical Society. He has written or co-authored approximately 140 papers and holds 20 patents.

Kamins has also been an acting assistant professor at the University of California, Berkeley. He has taught at Stanford University and been an adjunct professor at Santa Clara University.

He was an Associate Editor of the IEEE Transactions on Electron Devices and has presented short courses for the University of California, Oxford University, the IEEE, the American Vacuum Society and Semiconductor Equipment and Materials International (SEMI). He also is helping to guide research supported by the Semiconductor Research Corporation (SRC).

Education:
BS, MS and PhD degrees from the University of California, Berkeley.

Areas of interest:
self-assembled nanostructures formed by lattice-mismatched epitaxial deposition and self-assembled nanowires grown by catalytically enhanced chemical vapor deposition.

• 3rd edition of "Device Electronics for Integrated Circuits"
   
• IEEE Fellow award
   

Publications:

1997-2003

1. T. I. Kamins, X. Li, and R. Stanley Williams, "Thermal stability of Ti-catalyzed Si nanowires," Appl. Phys. Lett. 82, 263-265 (13 January 2003).
    
2. R. Magalhaes-Paniago, G. Medeiros-Ribeiro, A. Malachias, S. Kycia, T. I. Kamins, and R. Stan Williams, "Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering," Phys. Rev. B 66, 245312 (15 December 2002).
    
3. Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon, and J. S. Harris, "Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy," Appl. Phys. Lett. 81, 2451 (23 September 2002).
    
4. T.I. Kamins, G. Medeiros-Riberio, D.A.A. Ohlberg, and R. Stanley Williams, "Effect of phosphorus on Ge/Si(001) island formation," J. Phys. E 13, 974-977 (2002).
    
5. T.I. Kamins, R. Stanley Williams, T. Hesjedal, and J.S. Harris,"Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates," J. Phys. E 13, 995-998 (2002).
    
6. T. I. Kamins and R. Stanley Williams, "Trends in nanotechnology: Self-assembly and defect tolerance," mstnews, no. 3/01, pp. 34-36 (June 2001).
    
7. T. I. Kamins, K. Nauka, and R. Stanley Williams, "Effect of self-assembled Ge nanostructures on Si surface electronic properties," Applied Physics A 73, 1-9 (2001).
    
8. T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, "Effect of phosphorus on Ge/Si(001) island formation," Applied Physics Letters 78, 2220-2222 (9 April 2001).
    
9. T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal and J. S. Harris, "Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms," J. Appl. Phys. 89, 1008-1015 (15 January 2001).
    
10. W.L. Henstrom, C.P. Liu, J.M. Gibson, T.I. Kamins, and R.S. Williams, "Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion," Appl. Phys. Lett. 77, 1623-1625 (11 September 2000).
     
11. G.A.D. Briggs, D.P. Basile, G. Medeiros-Ribeiro, T.I. Kamins, D.A.A. Ohlberg, and R. Stanley Williams, "The incommensurate nature of epitaxial titanium disilicide islands on Si(001)" Surf. Sci. 457, 147-156 (1 June 2000).
     
12. T.I. Kamins and D.P. Basile, "Interaction of self-assembled Ge islands and adjacent Si layers grown on unpatterned and patterned Si(001) substrates," J. Electronic Materials 29, 570-575 (May 2000).
     
13. C.-P. Liu, J.M. Gibson, D.G. Cahill, T.I. Kamins, D.P. Basile, and R. Stanley Williams, "Strain evolution in coherent Ge/Si islands," Phys. Rev. Lett. 84, 1958-1961 (28 February 2000).
     
14. T.I. Kamins, R. Stanley Williams, Y. Chen, Y.-L. Chang, and Y.A. Chang, "Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si," Appl. Phys. Lett. 76, 562-564 (31 January 2000).
     
15. G. Medeiros-Ribeiro, T.I. Kamins, D.A.A. Ohlberg, and R. Stanley Williams, "Equilibrium size distributions of clusters during strained epitaxial growth," Materials Science and Engineering B 67, 31-38 (8 December 1999).
     
16. P.D. Miller, C.-P. Liu, W.L. Henstrom, J.M. Gibson, Y. Huang, P. Zhang, T.I. Kamins, D.P. Basile, and R. Stanley Williams, "Direct measurement of strain in a Ge island on Si(001)," Appl. Phys. Lett. 75, 46-48 (5 July 1999).
     
17. T.I. Kamins, R. Stanley Williams, and D. Basile, "Self-aligning of self-assembled Ge islands on Si(001)," Nanotechnology 10, 117-121 (1999).
     
18. R. Stanley Williams, G. Medeiros-Ribeiro, T. I. Kamins, and D. A. A. Ohlberg, "Chemical thermodynamics of the size and shape of strained Ge nanocrystals grown on Si(001)," Accounts of Chemical Research 32, 425-433 (1999).
     
19. T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, W. Zhang and S. Y. Chou, "Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting," Appl. Phys. Lett. 74, 1773-1775 (22 March 1999).
     
20. T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, and R. Stanley Williams, "Evolution of Ge Islands on Si(001) during Annealing," J. Appl. Phys. 85, 1159-1171 (15 January 1999).
     
21. T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, and R. Stanley Williams, "Dome-to-pyramid transition induced by alloying of Ge islands on Si(001)," Appl. Phys. A 67, 727-730 (December 1998).
     
22. R. Stanley Williams, Gilberto Medeiros-Ribeiro, Theodore I. Kamins, and Douglas A. A. Ohlberg, "Equilibrium Shape Diagram for Strained Ge Nanocrystals on Si(001)," J. Physical Chemistry B 102, 9605-9609 (November 26, 1998).
     
23. T.I. Kamins, G.A.D. Briggs, and R.S. Williams, "Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001)," Appl. Phys. Lett. 73, 1862-1864 (28 September 1998).
     
24. G. Medeiros-Ribeiro, T.I. Kamins, D.A.A. Ohlberg, and R. Stanley Williams, "Annealing of Ge nanocrystals on Si(001) at 550∞C: Metastability of huts and the stability of pyramids and domes," Phys. Rev. B 58, 3533-3556 (15 August 1998).
     
25. O.V. Kolosov, M.R. Castell, C.D. Marsh, G.A.D. Briggs, T.I. Kamins, and R. Stanley Williams, "Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy," Phys. Rev. Lett. B 81, 1046-1049 (3 August 1998).
     
26. T.I. Kamins and R. Stanley Willams, "A Model for Size Evolution of Pyramidal Ge Islands on Si(001) during Annealing," Surface Science 405, L580-L586 (15 May 1998).
     
27. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, "Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes," Science 279, 353-355 (16 January 1998).
     
28. T.I. Kamins and R. Stanley Williams, "Lithographic positioning of self-assembled Ge islands on Si(100)," Appl. Phys. Lett. 71, 1201-1203 (1 September 1997).
     
29. T.I. Kamins, E.C. Carr, R.S. Williams, and S.J. Rosner, "Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures," J. Appl. Phys. 81, 211-219 (1 January 1997).
     

Books

1. R.S. Muller and T.I. Kamins with M. Chan, Device Electronics for Integrated Circuits, Third Edition, John Wiley and Sons, New York, 2003.
    
2. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, Second Edition, John Wiley and Sons, New York, 1986; Russian translation of second edition: Moscow, 1989; Wiley International Edition, 1987; Italian translation of second edition, Turin, 1993.
    
3. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, John Wiley and Sons, New York, 1977; Spanish translation: Electronica de los Dispositivos para Circuitos Integrados, Editorial Limusa, S. A., Mexico City, Mexico, 1982; Italian translation: Dispositivi Electtronici nei Circuiti Integrati, Editore Boringhieri, Turin, Italy, 1982.
    
4. T.I. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition, Kluwer Academic Publishers, Norwell MA, 1998.
    
5. T.I. Kamins, Polycrystalline Silicon for Integrated-Circuit Applications, Kluwer Academic Publishers, Norwell MA, 1988.
    

Book Chapter

1. T.I. Kamins, Preparation and Properties of Polycrystalline-silicon Films, in Hand- book of Semiconductor Silicon Technology (eds. W.C. O'Mara, R.B. Herring, and L.P. Hunt, Noyes Publications, Park Ridge NJ, 1990), pp. 640-730.
    

Book Editor

1. T. Kamins, B. Raicu, and C. Thompson, Polysilicon Thin Films and Interfaces, Symposium Proceedings, Materials Research Society, vol. 182, 1990.
    

Presentations:

1. Self- Assembled TiSi x Nanostructures formed by Chemical Vapor Deposition
    
2. Self-Assembled Nanostructures
    
3. Metal-Catalyzed Nanowires
    
4. Effect of Phosphorus on Ge/ Si(001) Island Formation
    
5. Effect of Phosphorus on Ge/ Si(001) Island Formation (publication paper)
    
6. Nanowires: Speculation on Integrating Devices and Interconnections
    
7. Advanced Device Concepts and Research