People

Alex Bratkovski

E-mail: alex.bratkovski@hp.com

Location:
Quantum Structures Research Initiative Department
Hewlett-Packard Laboratories
Palo Alto, California

Biography:
Alexander M. Bratkovsky (Bratkovski) joined the Quantum Structures Research Initiative Department at Hewlett-Packard Laboratories in Palo Alto, California, as a regular member in 1996 (on right in the photo). Dr. Bratkovsky graduated with honors from the Department of Theoretical Nuclear Physics at Moscow Engineering Physics Institute in 1979. That same year he started his PhD project at V.M.Galitskii Many-Body Systems Lab at Kurchatov Institute for Atomic Energy, Moscow, where he was granted a PhD degree in 1982.

After finishing his PhD, Alex Bratkovsky became a member of the technical staff (first junior then senior researcher) at Kurchatov Institute, which has since become the first Russian Scientific Research Center. During 1985-1990, he also worked as a part-time Assistant Professor in the Theoretical Physics Department, Moscow Institute of Physics and Technology (also known as Moscow Phystech,). He supervised one PhD student who successfully obtained his degree and was later awarded a prestigious Humboldt Fellowship in Germany and two Master's diplomas.

In 1990, Dr. Bratkovsky moved to Cambridge, U.K., and worked as a research fellow at the IRC in Superconductivity until 1993. There he was affiliated with Cavendish Lab. In 1993, he moved to Oxford, UK, and joined the Department of Materials where he worked until joining HP Labs.

Dr. Bratkovsky is a member of the American Physical Society and an affiliate member of Institute of Physics, UK. Since 1999, he has been a visiting professor at the Department of Physics, Loughborough University of Technology, UK.

Dr. Bratkovsky has given invited talks at different meetings, including the Centennial (1999) March meeting of the American Physical Society. He has authored approximately 80 papers in refereed journals, including two review articles.

Main research interests:
Transport and physical properties of systems of nanometer and molecular size, theory of colossal magnetoresistance in doped manganites and superconductivity in cuprates, spin-dependent tunneling, ferroelectric thin films, switching and domain pattern formation.

Publications:

1. A.M. Bratkovsky and A.P. Levanyuk, Phys. Rev. Lett. 84, 3177 (2000): Abrupt evolution of the domain pattern and fatigue of thin ferroelectric films.
    
2. A. M. Bratkovsky and A.P. Levanyuk, Phys. Rev. B 61, 1 June (2000): Ferroelectric phase transitions in fims with depletion charge.
    
3. A.S. Alexandrov and A.M. Bratkovsky, Phys. Rev. Lett. 82, 141 (1999); 84, 2043 (2000): Carrier density collapse and colossal magnetoresistance in doped manganites.
    
4. A.S. Alexandrov and A.M.Bratkovsky, Phys. Rev. B 60, 6215 (1999): Colossal magneto-optical conductivity in doped manganites.
    
5. S. Sanvito, C.J. Lambert, J.H. Jefferson, and A.M. Bratkovsky, Phys. Rev. B 59, 11936 (1999): General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers.
    
6. A.M. Bratkovsky, Appl. Phys. Lett. 72, 2334 (1998): Assisted tunneling in ferromagnetic junctions and half-metallic oxides.
    
7. G. Medeiros-Ribeiro, A.M. Bratkovsky, T.I. Kamins, D.A.A. Ohlberg, and R.S. Williams, Science 279, 353 (1998): Shape transition of Ge nanocrystals on Si(001): from pyramids to domes.
    
8. A.M. Bratkovsky, Phys. Rev. B 56, 2344 (1997): Tunneling of electrons in conventional and half-metallic systems: Towards very large magnetoresistance.
    
9. A.S.Alexandrov and A.M. Bratkovsky, Phys. Rev. Lett. 76, 1308 (1996): The de Haas-van Alphen effect in canonical and grand canonical multiband Fermi liquid.