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October 1994, Article 17 |
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Automation of Electrical Overstress Characterization for Semiconductor Devices
An automatic test system has been developed to characterize semiconductor devices and interconnect failures caused by electrical overstress (EOS). Electrical stress in the form of current pulses of increasing amplitude is applied to a device until it reaches a prespecified failure criterion. The system was developed for monitoring EOS robustness in advanced CMOS processes.
by Carlos H. Diaz
 Article 17 - oct94a17.pdf
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