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High Current Density in µc-Si PECVD Diodes for Low Temperature Applications
Beck, Patricia A.; Nickel, Janice H.; Hartwell, Peter G.
HPL-2004-63
Keyword(s): diode; PECVD; µc-Si
Abstract: The development of microcrystalline diodes grown at low temperature by PECVD techniques is reported. Current densities near 200 A/cm2 at + 2 V, and rectification ratios are on the order of 105 at +/-1V and 107 at +/- 2V were obtained. The reverse currents were in the nano-ampere range. Correlations between deposition conditions and film quality are presented. The effects of mesa formation and subsequent treatments designed to reduce process damage are discussed: annealing conditions yield an increase in forward current, concurrent with a decrease in reverse current. Fabrication conditions are compatible with applications requiring low temperature processes (e. g., multi-layer structures, molecular layers, or plastic substrates and coatings). Notes: Copyright Materials Research Society. To be published in the MRS Spring Proceedings, 2004, San Francisco, CA
6 Pages
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