HP Labs Technical Reports

A 12 psec GaAs Double Heterostructure Step Recovery Diode

Tan, Michael R.; Wang, S. Y.; Mars, D. E.; Moll, J. L.

HPL-91-187

Keyword(s):

Abstract: We have fabricated a P(+)-i-N(+) Double Heterostructure Step Recovery Diode(DHSRD) on Al(0.3)Ga(0.7)As/ Al(x)Ga(1-x)As/Al(03)Ga(0.7)As with greater than 14V amplitude and a ( 10 to 90%) transition time of lessor or equal to 12 psec at a forward bias of 40mA. This is the fastest transition time reported for a DHSRD. The fast transition is due to the linearly graded bandgap Al(x)Ga(1-xAs undoped charge storage layer with grading from x=0 to x=0.15. The linear grading provides a quasi- electric field which confines the injected holes closer to the P(+) exit region and also provide a drift field to accelerate hole removal during the reverse recovery process.

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