Ping Mei - Publication (Partial List)

“Laser Crystallization for Polycrystalline Silicon Device Applications”,
Technology and Applications of Amorphous Silicon
Springer-Verlag, 1999. ISBN: 3540657142
Jim Boyce and Ping Mei
 

“Control of Layer Intermixing by Impurities and Defects”
Semiconductor Quantum Well Intermixing, Herbert Li (Editor)
Gordon & Breach Publishing Group, 2000. ISBN: 9056996894
Decai Sun and Ping Mei

Journal Articles:

“Electronics Produced by Roll-to-roll Self-Aligned Imprint Lithography”
LEOS Summer Topical Meetings, 2007 Digest of the IEEE Volume , Issue , 23-25 July 2007 Page(s):125 - 126
Digital Object Identifier 10.1109/LEOSST.2007.4288364
Jackson, W.B.; Perlov, C.; Amanza-Workman, M.; Braymen, S.; Chaiken, A.; Jeffrey, F.; Hauschildt, J.;
Jeans, A.; Kwon, O.; Luo, H.; Mei, P.; Taussig, C.
 

“Amorphous silicon memory arrays”
Journal of Non-Crystalline Solids Volume 352, Issues 9-20, 15 June 2006, Pages 859-862
W.B. Jackson, R. Elder, W. Hamburgen, A. Jeans, H.-J. Kim, H. Luo, P. Mei, C. Perlov, C. Taussig,
H. Branz, P. Stradin, Q. Wang, S. Ward, S. Braymen and F. Jeffery
 

“Low Temperature Thin-Film Silicon Diodes for Consumer Electronics”
Collins, R.W., et al., eds. Amorphous and Nanocrystalline Silicon Science and Technology 2005:
Proceedings of the Materials Research Society Symposium, 28 March–1 April 2005,
San Francisco, California. Materials Research Society Symposium Proceedings, Vol. 862.
Warrendale, PA: Materials Research Society, 2005; pp. 709-714.
Wang, Q.; Ward, S.; Duda, A.; Hu, J.; Stradins, P.; Crandall, R.S.; Branz, H.M.; Jeffrey, F.; Lou, H.;
Perlov, C.; Jackson, W.; Mei, P.; Taussig, C.
 

“High-current-density thin-film silicon diodes grown at low temperature”
Appl. Phys. Lett. 85, 2122 (2004); DOI:10.1063/1.1789580
Qi Wang, Scott Ward, Anna Duda, Jian Hu, Paul Stradins, Richard S. Crandall, and Howard M. Branz
Craig Perlov, Warren Jackson, Ping Mei, and Carl Taussig
 

“Economic In-Process Functional Testing Method for TFT Arrays”
Xerox Disclosure Journal, U. S. Cl. 324, Int. Cl. G01R 031/22, Jan. 1999.
Ping Mei, Richard L. Weisfield, and Donald L. Smith

“Laser processing for amorphous Si air-gap TFTs”
Thin Film Transistor Technologies V, Electrochemical Society 198th Meeting Proceedings, 2000.
Mei, P.; Ho, J.; Wang, Y.; Lau, R.; Street, R.; Boyce, J. B.; Lu, J. P
 

“Laser processing of amorphous silicon for large-area polysilicon imagers”
 Thin Solid Films vol.383, no.1-2 : 137-42, 15 Feb. 2001.
Boyce, J.B.; Fulks, R.T.; Ho, J.; Lau, R.; Lu, J.P.; Mei, P.; Street, R.A.; Van Schuylenbergh, K.F.; Wang, Y.
 

“Pulsed laser crystallization and doping for thin film transistors” (Invited Paper)
 Journal of Non-Crystalline Solids, Amorphous and Microcrystalline Semiconductors -
Science and Technology (ICAMS-18); 1999 August 23-27; Snowbird, Utah.  266-269: 1252-1259, 2000.
Mei, P.; Boyce, J. B.; Lu, J. P.; Ho, J.; Fulks, R. T. 
 

 “Laser processing of amorphous silicon for polysilicon devices, circuits and flat-panel imagers”
Amorphous and Heterogeneous Silicon Thin Films - 2000. Materials Research Society Symposium
Proceedings Vol.609) : A31.4.1-A31.4.12, 2001
Boyce, J.B.; Fulks, R.T.; Ho, J.; Lu, J.P.; Mei, P.; Street, R.A.; Van Schuylenbergh, K.F.; Wang, Y.
 

 “The impact of self aligned amorphous Si thin film transistors on imager array applications”
Journal of Non-Crystalline Solids; International Conference on Amorphous and Microcrystalline Semiconductors
(ICAMS-18); 1999 August 23-27; Snowbird, Utah, 266-269: 1294-1298, 2000.
Lu, J. P.; Mei, P.; Rahn, J.; Ho, J; Wang, Y.; Boyce, J. B.; Street, R. A.
 

“Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates”
Applied Physics Letters. 2000; 76 (16): 2182-2184. Bour, D. P.; Nickel, N. M.; Van De Walle, C. G.; Kneissl, M.; Krusor, B. S.; Mei, P.; Johnson, N. M.
 

"High-resolution, high fill factor a-Si:H sensor arrays for optical imaging", IEEE Trans. Nucl. Sci. (USA), IEEE Transactions on Nuclear Science, vol.46, no.3, pt.2, p. 457-61, 1999. Rahn, J.T.; Lemmi, F.; Lu, J.P.; Mei, P.; Apte, R.B.; Street, R.A.; Lujan, R.; Weisfield, R.L.; Heanue, J.A.
 

“Optical filter for fabricating self-aligned amorphous Si TFTs”. Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices - 1999. Symposium. (Materials Research Society Symposium Proceedings Vol.557) : 677-82, 1999. Mei, P.; Lu, J.P.; Chua, C.;
 

“Application of self-aligned amorphous Si thin-film transistors to driver circuits for flat panel displays and imagers”. Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices - 1999. Symposium. (Materials Research Society Symposium Proceedings Vol.557) : 647-52, 1999. Lu, J.P.; Mei, P.; Chua, C.;
 

“High performance amorphous silicon image sensor arrays”, J. Non-Cryst. Solids (Netherlands), Journal of Non-Crystalline Solids, vol.227-230, pt.B, p. 1306-10, 0022-3093 Elsevier May 1998. Street, R.A.; Apte, R.B.; Granberg, T.; Mei, P.; Ready, S.E.; Shah, K.S.; Weisfield, R.L.
 

“Hybrid amorphous and polycrystalline silicon devices for large-area electronics” (Invited Paper), Flat-Panel Display Materials - 1998. Symposium, p. 3-12. Mei, P.; Boyce, J.B.; Fork, D.K.; Anderson, G.; Ho, J.; Lu, J.; Hack, M.; Lujan, R.
 

“Performance study of self-aligned amorphous silicon thin-film transistor circuits”, Proceedings of the Fourth Symposium on Thin Film Transistor Technologies, p. 392-9. 1998. Lu, J.P.; Mei, P.; Lujan, R.; Boyce, J.B.
 

“Ubiquitous blue LEDs: the integration of GaN thin films with dissimilar substrate materials by wafer bonding and laser lift-off”, Compound Semiconductor, vol.5, no.9, p. 54-6, 1096-598X Franklin Publishing Nov.-Dec. 1999 Wong, W.; Sands, T.; Cheung, N.; Kneissl, M.; Bour, D.; Mei, P.; Romano, L.; Johnson, N.
 

“Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off”, Applied Physics Letters, vol.75, no.10, p. 1360-2, 1999. Wong, W.S.; Sands, T.; Cheung, N.W.; Kneissl, M.; Bour, D.P.; Mei, P.; Romano, L.T.; Johnson, N.M.
 

“Laser processing of polysilicon thin-film transistors: grain growth and device fabrication” (Invited Paper), Phys. Status Solidi A (Germany), Physica Status Solidi A, vol.166, no.2, p. 729-41, 1998. Boyce, J.B.; Mei, P.; Fulks, R.T.; Ho, J.
 

“Laser doping for self-aligned amorphous silicon thin film transistors”, Proceedings of the Third Symposium on Thin Film Transistor Technologies, p. 51-8, 1997. Mei, P.; Anderson, G.B.; Boyce, J.B.; Fork, D.K.; Lujan, R.
 

“Laser crystallized polysilicon thin films and applications”, Polycrystalline Thin Films: Structure, Texture, Properties, and Applications II. Symposium, p. 305-14, 1996. Boyce, J.B.; Mei, P.; Fork, D.K.; Anderson, G.B.; Johnson, R.I.
 

“A fully self-aligned thin-film transistor for display and imaging applications”, 54th Annual Device Research Conference Digest (Cat. No.96TH8193), p. 72-3 New York, NY, USA IEEE 1996. Mei, P.; Lujan, R.; Boyce, J.B.; Fork, D.K.; Anderson, G.B.
 

“Capillary waves in pulsed excimer laser crystallized amorphous Silicon”, Applied Physics Letters, vol.68, no.15, p. 2138-40, 0003-6951 AIP 8 April 1996. Fork, D.K.; Anderson, G.B.; Boyce, J.B.; Johnson, R.I.; Mei, P.
 

“Poly-Si peripheral circuits and contact properties of laser processed poly-Si thin film transistors”, 4th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.95TH8143), p. 721-3, 1995. Mei, P.; Boyce, J.B.; Fork, D.K.; Hack, M.; Lujan, R.; Ready, S.E.
 

“Low temperature processes for p-type polycrystalline silicon TFTs”, Proceedings of the Second Symposium on Thin Film Transistor Technologies, p. 92-102, EDITOR: Kuo, Y. Pennington, NJ, USA Electrochem. Soc 1995. Mei, P.; Anderson, G.B.; Boyce, J.B.; Fork, D.K.; Hack, M.; Johnson, R.I.; Lujan, R.A.; Ready, S.E.; Wu, I.W.
 

“Excimer laser annealing process for polysilicon TFT AMLCD Applications”, Conference Record of the 1994 International Display Research Conference and International Workshops on Active-Matrix LCDs and Display Materials, p. 134-7, Santa Ana, CA, USA SID 1994 Yale Sun; Sheau Chen; Ping Mei; Boyce, J.B.
 

“Laser doping and crystallization of amorphous silicon thin Films”, Microcrystalline and Nanocrystalline Semiconductors. Symposium, p. 909-14, 1995. Boyce, J.B.; Anderson, G.B.; Carey, P.G.; Fork, D.K.; Johnson, R.I.; Mei, P.; Ready, S.E.; Smith, P.M.
 

“Considerations for large area fabrication of integrated a-Si and poly-Si TFTs”, Flat Panel Display Materials. Symposium, p. 41-6, Pittsburgh, PA, USA Mater. Res. Soc 1994. Mei, P.; Anderson, G.B.; Boyce, J.B.; Fork, D.K.; Hack, M.; Johnson, R.I.; Lujan, R.A.; Ready, S.E.
 

“Characterization of the substrate interface of crystallized polycrystalline silicon thin films”, Polycrystalline Thin Films: Structure, Texture, Properties and Applications Symposium, p. 709-14, Philadelphia, PA, USA Mater. Res. Soc 1994 Anderson, G.B.; Boyce, J.B.; Fork, D.K.; Johnson, R.I.; Mei, P.; Ready, S.E.
 

“Pulse-to-pulse laser stability effects on multiple shot excimer laser crystallized a-Si thin films”, Polycrystalline Thin Films: Structure, Texture, Properties and Applications Symposium, p. 703-8, Philadelphia, PA, USA Mater. Res. Soc 1994. Johnson, R.I.; Anderson, G.B.; Boyce, J.B.; Fork, D.K.; Mei, P.; Ready, S.E.
 

“Large grain creation and destruction in excimer laser crystallized amorphous silicon”, Crystallization and Related Phenomena in Amorphous Materials. Symposium, p. 671-6, Pittsburgh, PA, USA Mater. Res. Soc 1994. Boyce, J.B.; Anderson, G.B.; Fork, D.K.; Johnson, R.I.; Mei, P.; Ready, S.E.
 

“On the nature of the defect passivation in polycrystalline silicon by hydrogen and oxygen plasma treatments”, IEEE Transactions on Electron Devices, vol.42, no.8, p.1559-60, 0018-9383 Aug. 1995. Nickel, N.H.; Mei, P.; Boyce, J.B.
 

“Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors”, Journal of Applied Physics, vol.76, no.5, p. 3194-9, 0021-8979 1 Sept. 1994. Mei, P.; Boyce, J.B.; Hack, M.; Lujan, R.; Ready, S.E.; Fork, D.K.; Johnson, R.I.; Anderson, G.B.
 

“Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors”, Applied Physics Letters, vol.64, no.9, p. 1132-4, 0003-695128 Feb. 1994. Mei, P.; Boyce, J.B.; Hack, M.; Lujan, R.A.; Johnson, R.I.; Anderson, G.B.; Fork, D.K.; Ready, S.E.
 

“Temperature dependence of the Hall mobility in polycrystalline Silicon”, Amorphous Silicon Technology - 1993 Symposium, p. 545-50, Pittsburgh, PA, USA Mater. Res. Soc 1993. Ready, S.E.; Boyce, J.B.; Fork, D.K.; Mei, P.; Anderson, G.B.;Johnson, R.I.
 

“Critical laser fluence observed in (111) texture, grain size and mobility of laser crystallized amorphous silicon”, Amorphous Silicon Technology - 1993 Symposium, p. 533-8, Pittsburgh, PA, USA Mater. Res. Soc 1993. Johnson, R.I.; Anderson, G.B.; Boyce, J.B.; Fork, D.K.; Mei, P.; Ready, S.E.; Chen, S.
 

“Laser dehydrogenation of PECVD amorphous silicon”, Amorphous Silicon Technology - 1993 Symposium, p. 151-6, Pittsburgh, PA, USA Mater. Res. Soc 1993. Mei, P.; Boyce, J.B.; Hack, M.; Lujan, R.A.; Johnson, R.I.; Anderson, G.B.; Fork, D.K.; Ready, S.E.; Smith, D.L.
 

“Structural study of tin and carbon coimplanted silicon”, Journal of Applied Physics, vol.69, no.12, p. 8417-19, 0021-8979, 15 June 1991. Mei, P.; Schmidt, M.T.; Yang, E.S.; Wilkens, B.J.
 

“Effects of Ge concentration on SiGe oxidation behavior”, Applied Physics Letters, vol.59, no.10, p. 1200-2, 0003-6951, 2 Sept. 1991. Liou, H.K.; Mei, P.; Gennser, U.; Yang, E.S.
 

“Picosecond photoconductive response of polycrystalline silicon thin films”, Applied Physics Letters, vol.57, no.1, p. 64-6, 0003-695, 2 July 1990. Shu, C.; Hu, B.B.; Zhang, X.-C.; Mei, P.; Yang, E.S.
 

“Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation”, Applied Physics Letters, vol.56, no.14, p. 1362-4, 0003-6951, 2 April 1990. Mei, P.; Jalali, B.; Yang, E.S.; Stoffel, N.G.; Hart, D.L.
 

“Studies of In/sub 0.53/Ga/sub 0.47/As/InP superlattice mixing and conversion”, Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium, p. 233-8, Pittsburgh, PA, USA Mater. Res. Soc 1989 Schwarz, S.A.; Mei, P.; Hwang, D.M.; Schwartz, C.L.; Venkatesan, T.; Palmstrom, C.J.; Stoffel, N.G.; Bhat, R.
 

“Study of the carrier concentration effect on Si enhanced AlGaAs/GaAs superlattice mixing”, Epitaxy of Semiconductor Layered Structures: Symposium, p. 161-4, Pittsburgh, PA, USA Mater. Res. Soc 1988 Mei, P.; Venkatesan, T.; Schwarz, S.A.; Stoffel, N.G.; Harbison, J.P.
 

“Conversion of InP/In 0.53/Ga0.47/As superlattices to Zn 3P 2/In 1-xGaAs and Zn 3P 2/Zn3As 2 superlattices by Zn diffusion”, Applied Physics Letters, vol.54, no.12, p. 1160-2, 0003-6951, 20 March 1989. Hwang, D.; Schwarz, S.A.; Mei, P.; Bhat, R.; Venkatesan, T.; Nazar, L.; Schwartz, C.L.
 

“Te induced AlAs/GaAs superlattice mixing”, Advanced Surface Processes for Optoelectronics: Symposium, p. 71-5, Pittsburgh, PA, USA Mater. Res. Soc 1988. Mei, P.; Schwarz, S.A.; Venkatesan, T.; Schwartz, C.L.; Colas,E.
 

“Silicon induced mixing of AlGaAs superlattices-behavior and mechanisms”, Advanced Surface Processes for Optoelectronics: Symposium, p.43-54, Pittsburgh, PA, USA Mater. Res. Soc 1988 Schwarz, S.A.; Venkatesan, T.; Mei, P.
 

“Study of interdiffusion in a Te-doped AlAs-GaAs superlattice”, Journal of Applied Physics, vol.65, no.5, p. 2165-7, 0021-8979, 1 March 1989. Mei, P.; Schwarz, S.A.; Venkatesan, T.; Schwartz, C.L.; Colas, E.
 

“Mixing inhibition and crystalline defects in heavily Si-doped AlAs/GaAs superlattices”, Applied Physics Letters, vol.53, no.26, p. 2650-2, 0003-6951, 26 Dec. 1988. Mei, P.; Schwarz, S.A.; Venkatesan, T.; Schwartz, C.L.; Harbison, J.P.; Florez, L.; Theodore, N.D.; Carter, C.B.
 

“Studies of ion beam enhanced mixing of AlGaAs superlattices”, Proc. SPIE - Int. Soc. Opt. Eng. (USA), Proceedings of the SPIE - The International Society for Optical Engineering, vol.945, p. 22-9, 0277-786X, 1988. Mei, P.; Schwarz, S.A.; Venkatesan, T.; Stoffel, N.G.; Harbison, J.P.
 

“InGaAs/InP superlattice mixing induced by Zn or Si diffusion”, Applied Physics Letters, vol.53, no.12, p. 1051-3, 0003-6951, 19 Sept. 1988. Schwarz, S.A.; Mei, P.; Venkatesan, T.; Bhat, R.; Hwang, D.M.; Schwartz, C.L.; Koza, M.; Nazar, L.; Skromme, B.J.
 

“Comparative studies of ion-induced mixing of GaAs-AlAs superlattices”, Applied Physics Letters, vol.52, no.18, p. 1487-9, 0003-6951, 2 May 1988. Mei, P.; Venkatesan, T.; Schwarz, S.A.; Stoffel, N.G.; Harbison, J.P.; Hart, D.L.; Florez, L.A.
 

“The effect of temperature and Si concentration on the mixing of AlAs/GaAs superlattices”, Interfaces, Superlattices, and Thin Films Symposium, p. 743-8, Pittsburgh, PA, USA Mater. Res. Soc 1987 Ping Mei; Yoon, H.W.; Venkatesan, T.; Schwarz, S.A.; Harbison, J.P.
 

“Ion induced mixing of AlGaAs/GaAs superlattices”, Materials Modification and Growth Using Ion Beams. Symposium, p. 171-85, Pittsburgh, PA, USA Mater. Res. Soc 1987 Venkatesan, T.; Schwarz, S.A.; Mei, P.; Yoon, H.W.
 

“Kinetics of silicon-induced mixing of AlAs-GaAs superlattices”, Applied Physics Letters, vol.50, no.25, p. 1823-5, 0003-6951, 22 June 1987. Mei, P.; Yoon, H.W.; Venkatesan, T.; Schwarz, S.A.; Harbison, J.P.
 

“Depth-dependent mixing of an AlAs-GaAs superlattice by ion Implantation”, Layered Structures and Epitaxy Symposium, p. 321-6, Pittsburgh, PA, USA Mater. Res. Soc 1986. Schwarz, S.A.; Venkatesan, T.; Bhat, R.; Koza, M.; Yoon, H.W.; Arakawa, Y.; Mei, P.
 

“Dose-dependent mixing of AlAs-GaAs superlattices by Si ion Implantation”, Applied Physics Letters, vol.49, no.12, p. 701-3, 0003-6951, 22 Sept. 1986. Venkatesan, T.; Schwarz, S.A.; Hwang, D.M.; Bhat, R.; Koza, M.; Yoon, H.W.; Mei, P.; Arakawa, Y.; Yariv, A.