|
7,341,893 |
Structure and method for thin film
device
Mei; Ping, Jeans; Albert, Taussig; Carl |
|
7,338,833 |
Dual dielectric structure for
suppressing lateral leakage current in high fill factor arrays
Lu; Jeng Ping, Mei; Ping, Lemmi; Francesco, Street; Robert A., Boyce; James B. |
|
7,304,364 |
Embossed mask lithography
Perlov; Craig, Taussig; Carl, Mei; Ping |
|
7,251,783 |
Large area storage display
Jackson; Warren, Mei; Ping |
|
7,202,179 |
Method of forming at least one thin
film device
Taussig; Carl P., Mei; Ping, Kim; Han-Jun |
|
7,161,838 |
Thin film transistor memory device
Mei; Ping, Eaton, Jr.; James R |
|
7,071,548 |
Semiconductor coated with a mixture
containing an adhesion promoter
Jeans; Albert Hua, Mei; Ping |
|
7,056,834 |
Forming a plurality of thin-film
devices using imprint lithography
Mei; Ping, Jackson; Warren B., Taussig; Carl Philp, Jeans; Albert |
|
6,940,142 |
Low data line capacitance image sensor
array using air-gap metal crossover
Street; Robert A., Mei; Ping, Rahn; Jeffrey T. |
|
6,887,792 |
Embossed mask lithography
Perlov; Craig, Taussig; Carl, Mei; Ping |
|
6,864,529 |
Thin film transistor memory device
Mei; Ping, Eaton, Jr.; James R. |
|
6,861,365 |
Method and system for forming a
semiconductor device
Taussig; Carl Phillip, Mei; Ping |
|
6,848,175 |
Method of forming an out-of-plane
structure
Fork; David K., Mei; Ping, Van Schuylenbergh; Koenraad F. |
|
6,844,214 |
Microelectromechanical system based
sensors, sensor arrays, sensing systems, sensing methods and methods of
fabrication
Mei; Ping, Sun; Decai, Street; Robert A. |
|
6,818,535 |
Thin phosphorus nitride film as an
n-type doping source used in a laser doping technology
Lu; Jeng Ping, Mei; Ping, Boyce; James B. |
|
6,807,079 |
Device having a state dependent upon
the state of particles dispersed in a carrier
Mei; Ping, Jackson; Warren |
|
6,794,725 |
Amorphous silicon sensor with
micro-spring interconnects for achieving high uniformity in integrated
light-emitting sources
Lemmi; Francesco, Chua; Christopher L., Mei; Ping, Lu; JengPing, Fork; David K.,
McIntyre; Harry J. |
|
6,762,113 |
Method for coating a semiconductor
substrate with a mixture containing an adhesion promoter
Jeans; Albert Hua, Mei; Ping |
|
6,757,314 |
Structure for nitride based laser
diode with growth substrate removed
Kneissl; Michael A., Bour; David P., Mei; Ping, Romano; Linda T. |
|
6,690,597 |
Multi-bit PROM memory cell
Perlov; Craig M., Mei; Ping |
|
6,653,030 |
Optical-mechanical feature fabrication
during manufacture of semiconductors and other micro-devices and nano-devices
that include micron and sub-micron features
Mei; Ping, Taussig; Carl P., Jeans; Albert H |
|
6,599,796 |
Apparatus and fabrication process to
reduce crosstalk in pirm memory array
Mei; Ping, Taussig; Carl P., Beck; Patricia A. |
|
6,595,787 |
Low cost integrated out-of-plane
micro-device structures and method of making
Fork; David K., Mei; Ping, Van Schuylenbergh; Koenraad F. |
|
6,586,318 |
Thin phosphorus nitride film as an
N-type doping source used in laser doping technology
Lu; Jeng Ping, Mei; Ping, Boyce; James B. |
|
6,504,175 |
Hybrid polycrystalline and amorphous
silicon structures on a shared substrate
Mei; Ping, Lujan; Rene A. |
|
6,448,102 |
Method for nitride based laser diode
with growth substrate removed
Kneissl; Michael A., Bour; David P., Mei; Ping, Romano; Linda T. |
|
6,384,461 |
Dual dielectric structure for
suppressing lateral leakage current in high fill factor arrays
Lu; Jeng Ping, Mei; Ping, Lemmi; Francesco, Street; Robert A., Boyce; James B. |
|
6,365,429 |
Method for nitride based laser diode
with growth substrate removed using an intermediate substrate
Kneissl; Michael A., Bour; David P., Mei; Ping, Romano; Linda T. |
|
6,300,648 |
Continuous amorphous silicon layer
sensors using sealed metal back contact
Mei; Ping, Lu; Jeng Ping, Lemmi; Francesco, Street; Robert A., Boyce; James B. |
|
6,288,435 |
Continuous amorphous silicon layer
sensors using doped poly-silicon back contact
Mei; Ping, Lu; Jeng Ping, Lemmi; Francesco, Street; Robert A., Boyce; James B. |
|
6,288,417 |
Light-emitting devices including
polycrystalline gan layers and method of forming devices
Nickel; Norbert H., Van de Walle; Christian G., Bour; David P., Mei; Ping |
|
6,252,215 |
Hybrid sensor pixel architecture with
gate line and drive line synchronization
Mei; Ping, Moore; Andrew J., Apte; Raj B., Ready; Steven E., Street; Robert A.,
Boyce; James B. |
|
6,236,831 |
Method and apparatus of recycling
office paper
Mei; Ping, Noolandi; Jaan, Boyce; James B. |
|
6,140,668 |
Silicon structures having an
absorption layer
Mei; Ping, Lujan; Rene A. |
|
6,107,641 |
Thin film transistor with reduced
parasitic capacitance and reduced feed-through voltage
Mei; Ping, Lujan; Rene A., Boyce; James B., Chua; Christopher L., Hack; Michael
G. |
|
6,051,827 |
Hybrid sensor pixel architecture with
threshold response
Mei; Ping, Moore; Andrew J., Apte; Raj B., Ready; Steven E., Street; Robert A.,
Boyce; James B. |
|
6,031,248 |
Hybrid sensor pixel architecture
Mei; Ping, Moore; Andrew J., Apte; Raj B., Ready; Steven E., Street; Robert A.,
Boyce; James B. |
|
6,020,223 |
Method of manufacturing a thin film
transistor with reduced parasitic capacitance and reduced feed-through voltage
Mei; Ping, Lujan; Rene A., Boyce; James B., Chua; Christopher L., Hack; Michael
G. |
|
6,019,796 |
Method of manufacturing a thin film
transistor with reduced parasitic capacitance and reduced feed-through voltage
Mei; Ping, Lujan; Rene A., Boyce; James B., Chua; Christopher L., Hack; Michael
G. |
|
6,011,531 |
Methods and applications of combining
pixels to the gate and data lines for 2-D imaging and display arrays
Mei; Ping, Boyce; James B., Street; Robert A., Fork; David K. |
|
6,005,238 |
Hybrid sensor pixel architecture with
linearization circuit
Mei; Ping, Moore; Andrew J., Apte; Raj B., Ready; Steven E., Street;
Robert A., Boyce; James B. |
|
5,893,948 |
Method for forming single silicon
crystals using nucleation sites
Nickel; Norbert H., Anderson; Gregory B., Ready; Steven E., Boyce; James B.,
Mei; Ping |
|
5,871,826 |
Proximity laser doping technique for
electronic materials
Mei; Ping, Lujan; Rene A., Boyce; James B. |
|
5,821,135 |
Methods for and applications of making
buried structures in semiconductor thin films
Mei; Ping, Anderson; Gregory B., Boyce; James B., Fork; David K., Johnson;
Richard I. |
|
5,767,877 |
Toner jet printer
Mei; Ping, Biegelsen; David Kalman, Boyce; James Buckley |
|
5,733,641 |
Buffered substrate for semiconductor
devices
Fork; David K., Boyce; James B., Mei; Ping, Ready; Steve, Johnson; Richard I.,
Anderson; Greg B. |
|
5,366,926 |
Low temperature process for laser
dehydrogenation and crystallization of amorphous silicon
Mei; Ping, Boyce; James B., Johnson; Richard I., Hack; Michael G., Lujan; Rene
A. |
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