HP Labs Technical Reports

Simulated Transient Behavior of Partially Depleted 0.18 um SOI n-MOSFET

Vande Voorde, Paul

HPL-95-57

Keyword(s):

Abstract: 2-D simulations are used to study the behavior of partially depleted SOI devices under transient conditions. The parameter of interest is the potential of the floating body (V(sub body)) which determines important device parameters such as threshold voltage and breakdown. Two phenomena govern V(sub body): capacitive coupling of the body to the other nodes of the device and impact ionization currents generated near the drain. Capacitive coupling, particularly to the drain, effects V(sub body) during transients of arbitrarily short duration. On the other hand, impact ionization requires a finite body charging time to effect V(sub body). This charging time due to impact ionization has been simulated and depends critically on the bias condition.

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