HP Labs Technical Reports

Quantum Confined Stark Effect Absorption in an Edge-Emitting Light-Emitting Diode

Fouquet, Julie E.; Sorin, Wayne V.; Trott, Gary; Ludowise, Michael J.; Braun, David

HPL-93-03

Keyword(s):

Abstract: The quantum-confined Stark effect is employed to form an integral reverse-biased absorber in GaInAsP edge-emitting diode. Optical low- coherence reflectometry is used to measure the magnitude of reflections through this absorber. Front facet-back facet round trip reflection magnitudes are below -110 dB in devices having an antireflection coating on the front facet only. All other round trip reflections are below -80 dB. This device provides a wide usable dynamic range in optical low coherence reflectometry measurements.

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